Ridge waveguide 1310 nm lasers based on multiple stacks of InAs/GaAs quantum dots
Author:
Affiliation:
1. Industrial Technology Research Institute, Hsinchu, Taiwan
2. Department of Electronphysics, National Chiao Tung University, Hsinchu, Taiwan
3. A. F. Ioffe Physico‐Technical Institute, 194021 St. Petersburg, Russia
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303085
Reference7 articles.
1. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
2. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
3. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
4. Infrared Vertical-Cavity Surface-Emitting Lasers: An Industrial Perspective
5. The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
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2. Experiments and Simulation of Spectrally-Resolved Static and Dynamic Properties in Quantum Dot Two-State Lasing;Japanese Journal of Applied Physics;2009-03-23
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