An analysis of transient thermal properties for high power GaN-based laser diodes-Reference-Cited by-同舟云学术

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An analysis of transient thermal properties for high power GaN-based laser diodes

Published:2010-04-26 Issue:7-8 Volume:7 Page:1801-1803
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Kim Jae Min,Kim Seungtaek,Kang Sung Bok,Kim Young Jin,Jeong Hoon,Lee Kyeongkyun,Kim Jongseok,Lee Sangdon,Suh Dongsik,Yi Jeong Hoon,Choi Yoonho,Jung Seok Gu,Noh Minsoo

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes;Journal of Semiconductors;2020-10-01

2. High accuracy thermal resistance measurement in GaN/InGaN laser diodes;Solid-State Electronics;2015-04

3. Thermal analysis of GaN laser diodes in a package structure;Chinese Physics B;2012-08

4. Temperature Dependent Thermal Properties of a GaN-based Laser Diode Analyzed by an Electrical Method;AIP Conference Proceedings;2011

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