Effects of indium incorporation in AlGaN on threading dislocation density-Reference-Cited by-同舟云学术

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Effects of indium incorporation in AlGaN on threading dislocation density

Published:2005-04-11 Issue:7 Volume:2 Page:2145-2148
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kang H.¹,Kandoor S.²,Gupta S.¹,Ferguson I.,Guo S. P.³,Pophristic M.³

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA

2. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA

3. EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461515

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal mosaicity determined by a novel layer deconvolution Williamson–Hall method;CrystEngComm;2021

2. Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers;Optik;2019-09

3. Indium-surfactant-assisted epitaxial growth of semi-polar $$\left(11\overline{2}2\right)$$ 11 2 ¯ 2 plane Al0.42Ga0.58N films;Journal of Materials Science: Materials in Electronics;2017-06-24

4. Structural and optical properties of Al x Ga 1−x N (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition;Superlattices and Microstructures;2017-01

5. Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers;Superlattices and Microstructures;2016-10

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