Growth of polycrystalline InN on silica glass by ECR‐MBE
Author:
Affiliation:
1. Dept. of Photonics, Ritsumeikan Univ., 1‐1‐1 Noji‐Higashi, Kusatsu, Shiga 525‐8577, Japan
2. Center for Promotion of the COE Program, Ritsumeikan Univ., 1‐1‐1 Noji‐Higashi, Kusatsu, Shiga 525‐8577, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461583
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers;Journal of Applied Physics;2019-08-21
2. Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates;Thin Solid Films;2016-07
3. Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD;Rare Metals;2012-03-30
4. Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica;physica status solidi (a);2012-01-09
5. Recent advances in the MOVPE growth of indium nitride;physica status solidi (a);2009-12-10
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