Defect‐impurity interactions in irradiated tin‐doped Cz‐Si crystals-Reference-Cited by-同舟云学术

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Defect‐impurity interactions in irradiated tin‐doped Cz‐Si crystals

Published:2003-01-27 Issue:2 Volume: Page:694-697
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Khirunenko L. I.¹,Kobzar O. A.¹,Pomozov Yu. V.¹,Sosnin M. G.¹,Tripachko N. A.¹,Markevich V. P.²³,Murin L. I.³,Peaker A. R.²

Affiliation:

1. Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

2. Centre for Electronic Materials, UMIST, Sackville Street, Manchester M60 1QD, UK

3. Institute of Solid State and Semiconductor Physics, P. Brovki str. 17, 220072 Minsk, Belarus

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306195

Reference17 articles.

1. F.Shimura(Ed.) Oxygen in Silicon Semiconductors and Semimetals Vol.42(Academic Press San Diego 1994).

2. G.DaviesandR. C.Newman in: Handbook on Semiconductors edited by T. S. Moss (Elsevier Publ. Co. Amsterdam 1994) p. 1557.

3. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter

4. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter

5. Identification of an interstitial carbon‐interstitial oxygen complex in silicon

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