Performance of AlGaN/GaN heterojunction FETs for microwave power applications-Reference-Cited by-同舟云学术

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Performance of AlGaN/GaN heterojunction FETs for microwave power applications

Published:2006-06 Issue:6 Volume:3 Page:2254-2260
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Miyamoto H.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference12 articles.

1. , , , , , , , , and , 2002 IEEE MTT-S Int. Microwave Symp. (2002), p. 1819.

2. , , , , , , and , 2003 IEDM Tech. Digest (2003), p. 983.

3. , , , , , , , , , and , 2004 IEEE MTT-S Int. Microwave Symp. (2004), p. 1351.

4. , , , , , , , , , , , and , 2005 IEEE MTT-S Int. Microwave Symp., WE1E-1.

5. , , , , , , , and , 2005 IEEE MTT-S Int. Microwave Symp., WE1E-2.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Damage in GaN-Based Materials and Devices;Advanced Energy Materials;2014-01-31

2. Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer;Applied Physics A;2013-05-28

3. Radiation effects in GaN materials and devices;J. Mater. Chem. C;2013

4. Radiation Effects in GaN;Springer Series in Materials Science;2011-11-24

5. Neutron transmutation doping effects in GaN;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

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