Analysis of the wavelength‐power performance roll‐off in green light emitting diodes
Author:
Affiliation:
1. Future Chips Constellation, Department of Physics, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180‐3590, USA
2. Uniroyal Optoelectronics, 3401 Cragmont Dr, Tampa Florida 33619, USA
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200405083
Reference8 articles.
1. I.Akasaki in: Nitride Semiconductors edited by F. A. Ponce S. P. DenBaars B. K. Meyer S. Nakamura and T. Strite Mater. Res. Soc. Symp. Proc. Vol. 482 3–14 (1998).
2. I.AkasakiandH.Amano in: High Brightness Light Emitting Diodes edited by G.B. Stringfellow and M.G. Craford Semiconductors and Semimetals Vol. 48 (Academic Press London 1997) p. 357.
3. Future challenges and directions for nitride materials and light emitters
4. C.Wetzel T.Takeuchi H.Amano andI.Akasaki in: Wide‐Bandgap Semiconductors for High Power High Frequency and High Temperature edited by S. DenBaars J. Palmour M. Shur and M. Spencer Proc. Mater. Res. Soc. Symp. Vol. 512 181‐6 (1998).
5. Luminescences from localized states in InGaN epilayers
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