MBE growth of ZnMgCdS compounds on (001) GaAs for UV‐A sensors
Author:
Affiliation:
1. Kagami Memorial Laboratory for Materials Science and Engineering, Waseda University, 2‐8‐26 Nishiwaseda, Shinjuku‐ku, Tokyo 169‐0051, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304127
Reference10 articles.
1. Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes
2. ZnO Schottky ultraviolet photodetectors
3. Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors
4. Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source
5. Molecular-Beam Epitaxial Growth of ZnMgCdS Layers and Their Application to UV-A Photodetectors
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