Electron field emission from nanostructured surfaces of GaN and AlGaN-Reference-Cited by-同舟云学术

Electron field emission from nanostructured surfaces of GaN and AlGaN

Published:2008-02 Issue:2 Volume:5 Page:425-430
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Evtukh A.,Yilmazoglu O.,Litovchenko V.,Semenenko M.,Gorbanyuk T.,Grygoriev A.,Hartnagel H.,Pavlidis D.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference21 articles.

1. Material and device issues of AlGaN/GaN high electron mobility transistors, in: Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 3, edited by A.A. Balandin and K.L. Wang (American Scientific Publ., 2006), pp. 95-152.

2. Band parameters for III–V compound semiconductors and their alloys

3. Field-emission based vacuum device for the generation of terahertz waves

4. Vacuum Microelectronics

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