Theoretical study of rare earth point defects in GaN
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference19 articles.
1. Multiple color capability from rare earth-doped gallium nitride
2. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
3. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
4. Rare earth doped III-nitrides for optoelectronics
5. Lattice location and optical activation of rare earth implanted GaN
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