Low‐energy charge‐transfer state and optical properties of Eu 3+ ‐doped GaN-Reference-Cited by-同舟云学术

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Low‐energy charge‐transfer state and optical properties of Eu 3+ ‐doped GaN

Published:2003-11-24 Issue:7 Volume: Page:2639-2643
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Tanaka Masanori¹²,Morishima Shinichi³,Bang Hyungjin³,Ahn Jeung Sun⁴,Sekiguchi Takashi⁵,Akimoto Katsuhiro³

Affiliation:

1. Single Quantum Dot Project, ERATO, Japan Science and Technology Corporation, 5‐9‐9 Tokodai, Tsukuba 300‐2635, Japan

2. Present address: Hikari Building, 1‐8‐18 Nishi‐Shinsaibashi, Chuo‐ku, Osaka 542‐0086, Japan; Fax: +81‐6‐6245‐9697

3. Institute of Applied Physics, University of Tsukuba, 1‐1‐1 Tennodai, Tsukuba 305‐8573, Japan

4. Japan Advanced Institute of Science and Technology, Tatsunokuchi, Ishikawa 923‐1292, Japan

5. National Institute for Materials Science, 1‐2‐1 Sengen, Tsukuba 305‐0047, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303447

Reference19 articles.

1. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

2. Green electroluminescence from Er-doped GaN Schottky barrier diodes

3. Growth of Eu Doped GaN and Electroluminescence from MIS Structure

4. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

5. Photoluminescence and cathodoluminescence of GaN doped with Pr

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1. The predictability of the ground state of 3d transition metal ion as luminescent centers in the tetrahedral sites in inorganic compounds;Journal of Luminescence;2022-07

2. Rare-earth defects in GaN: A systematic investigation of the lanthanide series;Physical Review Materials;2022-04-15

3. Eu–Mg defects and donor–acceptor pairs in GaN: photodissociation and the excitation transfer problem;Journal of Physics D: Applied Physics;2018-01-22

4. Optical Properties and Energy Transfer Mechanism in Er3+ and Eu3+ Co-doped GaN Films;ACTA PHOTONICA SINICA;2018

5. Luminescence and energy-transfer mechanisms inEu3+-doped GaN epitaxial films;Physical Review B;2010-01-21

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