Electrically biased photoreflectance study of cubic GaN/GaAs(001) heterointerface
Author:
Affiliation:
1. Department of Advanced Materials Science, The University of Tokyo, 5‐1‐5 Kashiwanoha, Kashiwa‐shi, Chiba 277‐8561, Japan
2. Department of Applied Physics, The University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 133‐8656, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303361
Reference6 articles.
1. p- andn-type cubic GaN epilayers on GaAs
2. Photoconductivity and Electroreflectance Study of Cubic GaN/GaAs(001) Heterostructures by Optical-Biasing Technique
3. Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic AlxGa1−xN
4. Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface
5. Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
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2. Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN;Applied Physics Letters;2010-06-14
3. Electrical conduction in cubic GaN films grown on GaAs(001) by RF-MBE;physica status solidi (c);2008-05
4. Built-in electric field at cubic GaN/GaAs(001) heterointerfaces investigated by phase-selected photoreflectance excitation;physica status solidi (b);2004-10
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