Temperature study of the photoluminescence of a single InAs/GaAs quantum dot-Reference-Cited by-同舟云学术

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Temperature study of the photoluminescence of a single InAs/GaAs quantum dot

Published:2004-02 Issue:3 Volume:1 Page:608-611
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Donchev V.¹²,Karlsson K. F.¹,Moskalenko E. S.¹³,Holtz P. O.¹,Monemar B.¹,Schoenfeld W. V.⁴,Garcia J. M.⁴,Petroff P. M.⁴

Affiliation:

1. Department of Physics and Measurement Technology, Linköping University, S‐581 83 Linköping, Sweden

2. Faculty of Physics, Sofia University, 5, blvd. James Bourchier, 1164‐Sofia, Bulgaria

3. A. F. Ioffe Physico‐Technical Institute, RAS, 194021, Polytechnicheskaya 26, St. Petersburg, Russia

4. Materials Department, University of California, Santa Barbara, California 93106, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304050

Reference11 articles.

1. Dominance of charged excitons in single-quantum-dot photoluminescence spectra

2. Charged and neutral exciton complexes in individual self-assembledIn(Ga)Asquantum dots

3. Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots

4. Acceptor-induced threshold energy for the optical charging of InAs single quantum dots

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