Deep electron states in indium-doped Cd0.93Mn0.07Te DLTS study-Reference-Cited by-同舟云学术

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Deep electron states in indium-doped Cd0.93Mn0.07Te DLTS study

Published:2006-03 Issue:4 Volume:3 Page:817-820
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Hajdusianek A.,Szatkowski J.,Płaczek-Popko E.,Sierański K.,Becla P.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference8 articles.

1. Deep-level defects responsible for persistent photoconductivity in Ga-dopedCd1−xMnxTe

2. Persistent photoconductivity and DLTS in indium-doped Cd0.9Mn0.1Te

3. Cd0.8Mn0.2Te:(In/Al) - DLTS study

4. Cd0.8Mn0.2Te:(In/Al) – deep level transient spectroscopy

5. , , , , , and , Proc. of the 25th Internat. Conf. Physics of Semiconductors, Osaka 2000 (Eds. N. Miura and T. Ando), pp. 1457-8 (2001).

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