Defects and diffusion in high purity silicon for detector applications-Reference-Cited by-同舟云学术

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Defects and diffusion in high purity silicon for detector applications

Published:2004-07-30 Issue:9 Volume:1 Page:2250-2257
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Svensson B. G.¹,Monakhov E.V.¹,Alfieri G.¹,Mikelsen M.¹,Avset B. S.²,Hallén A.³

Affiliation:

1. University of Oslo, Physics Department, Physical Electronics, P.O. Box 1048 Blindern, 0316 Oslo, Norway

2. SINTEF, Electronics and Cybernetics, P.O. Box 124 Blindern, 0314 Oslo, Norway

3. Royal Institute of Technology, Solid State Electronics, P.O. Box E229, 164 40 Kista‐Stockholm, Sweden

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200404847

Reference33 articles.

1. RD50/Collaboration home page: http://rd50.web.cern.ch/rd50/.

2. Comparison of radiation damage in silicon induced by proton and neutron irradiation

3. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter

4. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter

5. Overlapping electron traps inn‐type silicon studied by capacitance transient spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations;The Journal of Chemical Physics;2023-07-21

2. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons;Journal of Applied Physics;2018-04-28

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