Chemical mechanical polishing for decoration and measurement of dislocations on freestanding GaN wafers
Author:
Affiliation:
1. ATMI, Inc, 7 Commerce Drive, Danbury, CT 06810, USA
2. Department of Materials Science and Engineering, State University of New York, Stony Brook, NY 11794‐2275, USA
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303501
Reference9 articles.
1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
2. Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy
3. Acid etching for accurate determination of dislocation density in GaN
4. Growth and characterization of low defect GaN by hydride vapor phase epitaxy
5. Characterization of threading dislocations in GaN epitaxial layers
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