Analysis of self‐pulsation characteristics of InGaN laser diode-Reference-Cited by-同舟云学术

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Analysis of self‐pulsation characteristics of InGaN laser diode

Published:2003-11-24 Issue:7 Volume: Page:2296-2299
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Tronciu V. Z.¹,Yamada Minoru¹,Ohno Tomoki²,Ito Shigetoshi²,Kawakami Toshiyuki²,Taneya Mototaka²

Affiliation:

1. Department of Electrical and Electronic Engineering, Faculty of Engineering, Kanazawa University, 2‐40‐20, Kodatsuno, Kanazawa, 920‐8667, Japan

2. Advanced Technology Research Laboratories, Sharp Corporation, 2613‐1 Ichinomoto‐cho, Tenri, Nara 632‐8567, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303377

Reference17 articles.

1. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

2. S.Nakamura S.Pearton andG.Fasol The Blue Laser Diode 2nd ed. (Springer Berlin 2000).

3. Optical Properties of Strained AlGaN and GaInN on GaN

4. Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

5. Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate

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1. Achieving high power continuous wave and short pulses of semiconductor laser for use in photodynamic therapy: theoretical work;Journal of Computational Electronics;2024-05-31

2. InGaN tandem blue–violet quantum well lasers with high frequency self-pulsations;Optical and Quantum Electronics;2014-06-17

3. Modeling of Self-Sustained Pulsation Based on Two-Section Distributed Feedback Lasers with Shift-Layer;Japanese Journal of Applied Physics;2010-12-20

4. A theoretical and experimental investigation of the dynamics of tandem blue–violet lasers;Optics Communications;2004-05

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