Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer-Reference-Cited by-同舟云学术

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Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer

Published:2009-01-26 Issue:S2 Volume:6 Page:S352-S355
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Lipskil Frank,Thapa Sarad B.,Hertkorn Joachim,Wunderer Thomas,Schwaiger Stephan,Scholz Ferdinand,Feneberg Martin,Wiedenmann Michael,Thonke Klaus,Hochmuth Holger,Lorenz Michael,Grundmann Marius

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition Growth of Zinc Oxide on Sapphire with Methane: Initial Crystal Formation Process;Crystal Growth & Design;2019-07-16

2. Improvement of Heterointerface Properties of GaAs Solar Cells Grown With InGaP Layers by Hydride Vapor-Phase Epitaxy;IEEE Journal of Photovoltaics;2019-01

3. Controlled growth of ZnO layers and nanowires using methane as reducing precursor;Journal of Materials Research;2017-07-25

4. Fabrication and whispering gallery resonance of self-rolled up gallium nitride microcavities;Thin Solid Films;2017-04

5. Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy;IEEE Journal of Photovoltaics;2017-01

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