Momentum relaxation of electrons in InN-Reference-Cited by-同舟云学术

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Momentum relaxation of electrons in InN

Published:2005-05 Issue:8 Volume:2 Page:3077-3081
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Zanato D.¹,Tiras E.²,Balkan N.¹,Boland‐Thoms A.¹,Wah J. Y.³,Hill G.⁴

Affiliation:

1. University of Essex, Department of Electronic Systems Engineering, Colchester, UK

2. Hacettepe University, Faculty of Engineering, Department of Physics, Beytepe, Ankara, Turkey

3. CSSI, Faculty of Engineering, Multimedia University, Cyberjaya 63100, Malaysia

4. University of Sheffield, Department of Electronic and Electrical Engineering, Sheffield, United Kingdom

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460733

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-phonon interaction in the Bloch-Grüneisen regime: Barrier penetration effects;Journal of Physics and Chemistry of Solids;2024-02

2. The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures;Materials Science in Semiconductor Processing;2021-02

3. The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys;Nanoscale Research Letters;2012-08-31

4. Determination of dislocation densities in InN;physica status solidi (c);2012-01-13

5. Longitudinal polar optical phonons in InN/GaN single and double het- erostructures;physica status solidi (c);2011-03-31

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