Etch characteristics of magnetic tunnel junction stack using a high density plasma in a HBr/Ar gas
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. Recent developments in magnetic tunnel junction MRAM
2. Two-level BEOL processing for rapid iteration in MRAM development
3. Magnetic tunnel junctions for magnetic random access memory applications
4. A novel process for highly manufacturable MRAM
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1. Optimization on Dry-Etching Process for High-Density STT-MRAM;IEEE Transactions on Nanotechnology;2021
2. Inductively Coupled Plasma Reactive Ion Etching of Magnetic Tunnel Junction Stacks in a CH3COOH/Ar Gas;ECS Solid State Letters;2015-08-12
3. Etch characteristics of CoFeB thin films and magnetic tunnel junction stacks in a H2O/CH3OH plasma;Korean Journal of Chemical Engineering;2014-11-23
4. Inductively coupled plasma reactive ion etching of magnetic tunnel junction stacks using H2O/CH4 mixture;Thin Solid Films;2013-11
5. Inductively coupled plasma reactive ion etching of FePt magnetic thin films in a CH4/O2/Ar plasma;Thin Solid Films;2012-12
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