WSiN cap for Ohmic contacts to n‐GaN with better morphology-Reference-Cited by-同舟云学术

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WSiN cap for Ohmic contacts to n‐GaN with better morphology

Published:2005-04-11 Issue:7 Volume:2 Page:2548-2550
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Lau W. S.¹,Singh B. P.¹,Gunawan S.¹,Tan Joy B. H.¹,Jiang Y. Y.²,Wynn Richard Thet²,Lim Vanissa S. W.²,Trigg A. D.²

Affiliation:

1. Nanyang Technological University, School of Electrical and Electronic Engineering, Division of Microelectronics, Block S2.1, Nanyang Avenue, Singapore 639798

2. Institute of Microelectronics, 11 Singapore Science Park Road, Singapore Science Park II, Singapore 117685

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461323

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion Barriers;Advanced Interconnects for ULSI Technology;2012-02-17

2. WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors;Japanese Journal of Applied Physics;2009-11-20

3. Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500°C by Ohmic contact recess etching;Microelectronics Reliability;2009-05

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