Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN-Reference-Cited by-同舟云学术

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Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN

Published:2002-12-19 Issue:1 Volume: Page:516-519
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kazlauskas K.¹,Tamulaitis G.¹,Žukauskas A.¹,Prystawko P.²,Leszczynski M.²,Suski T.²,Perlin P.²,Grzegory I.²,Porowski S.²

Affiliation:

1. Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9‐III, 2040 Vilnius, Lithuania

2. UNIPRESS, High Pressure Research Center, Sokolowska 29, 01‐142 Warszawa, Poland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390102

Reference13 articles.

1. Stimulated Emission and Laser Action in Gallium Nitride

2. Electron-hole plasma generation in gallium nitride

3. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

4. Near-threshold gain mechanisms in GaN thin films in the temperature range of 20–700 K

5. Gain Spectroscopy of HVPE-Grown GaN

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