Study on electrical properties of Al/Cu(In,Ga)Se2 Schottky junction and ZnO/CdS/Cu(In,Ga)Se2 heterojunction using admittance spectroscopy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. The influence of buffer layer on the transient behavior of thin film chalcopyrite devices
2. Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2based heterojunctions
3. Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness
4. Effects of the surface Cu2−xSe phase on the growth and properties of CuInSe2 films
5. Electronic properties of CuGaSe2-based heterojunction solar cells. Part II. Defect spectroscopy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of annealing under various atmospheres on electrical properties of Cu(In,Ga)Se2 films and CdS/Cu(In,Ga)Se2 heterostructures;Thin Solid Films;2008-08
2. Investigation of relation between Ga concentration and defect levels of Al/Cu(In,Ga)Se2 Schottky junctions using admittance spectroscopy;Thin Solid Films;2007-05
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