Electric field emission from nitride semiconductor grown on Mo substrate
Author:
Affiliation:
1. The Institute of Scientific and Industrial Research, Osaka University, 8‐1 Mihogaoka, Ibaraki, Osaka 567‐0047, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303441
Reference8 articles.
1. Physical properties of thin‐film field emission cathodes with molybdenum cones
2. The growth and properties of Al and AlN films on GaN(0001)–(1×1)
3. Study of oxygen chemisorption on the GaN(0001)‐(1×1) surface
4. Growth of GaN and $\bf Al_{0.2}Ga_{0.8}N$ on Patterened Substrates via Organometallic Vapor Phase Epitaxy
5. Electronic states and effective negative electron affinity at cesiated p-GaN surfaces
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1. Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application;Japanese Journal of Applied Physics;2013-11-01
2. Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex;Journal of Alloys and Compounds;2010-05
3. Formation process of sharp-pointed structures on GaN nanorods during RF-MBE growth and their field emission characteristics;physica status solidi (c);2007-06
4. Gallium Nitride: Synthesis and Characterization;Transactions of the Indian Ceramic Society;2007-01
5. Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides;Applied Physics Letters;2005-02-21
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