Investigation of 2D Electron Gas on AlGaN/GaN Interface by Electroreflectance
Author:
Affiliation:
1. Institute of Experimental Physics, Warsaw University, Hoż a 69, 00‐681 Warsaw, Poland
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390055
Reference7 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Electroreflectance bias-wavelength mapping of the modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs structure
4. Determination of Si ?-Doping Concentration in GaN by Electroreflectance
5. Schottky-Barrier Electroreflectance: Application to GaAs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Tunable GaN/AlGaN ultraviolet detectors with built-in electric field;Journal of Applied Physics;2009-04-15
2. Determination of polarization charge density on interface of AlGaN∕GaN heterostructure by electroreflectance;Applied Physics Letters;2006-10-16
3. Determination of the polarization discontinuity at the AlGaN∕GaN interface by electroreflectance spectroscopy;Applied Physics Letters;2005-05-02
4. Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC;physica status solidi (a);2005-05
5. Photoreflectance on wide bandgap nitride semiconductors;physica status solidi (a);2005-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3