Increase in luminescence efficiency of GaPN layers by thermal annealing-Reference-Cited by-同舟云学术

Increase in luminescence efficiency of GaPN layers by thermal annealing

Published:2003-11-24 Issue:7 Volume: Page:2741-2744
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Utsumi A.¹,Yonezu H.¹,Furukawa Y.¹,Momose K.¹,Kuroki K.¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1‐1 Hibarigaoka, Tempaku‐cho, Toyohashi, Aichi, 441‐8580, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303346

Reference8 articles.

1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems

2. Effects of nitrogen on the band structure of GaNxP1−x alloys

3. GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates

4. Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

5. Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

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