222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers-Reference-Cited by-同舟云学术

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222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers

Published:2009-03-12 Issue:S2 Volume:6 Page:S459-S461
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Norimichi Noguchi,Hirayama Hideki,Yatabe Tohru,Kamata Norihiko

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of trapezoidal defects in enhancing the yellow luminescence of high-Al content n-type AlGaN films;Applied Physics Letters;2024-08-05

2. Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection.;Revista Mexicana de Física;2022-02-09

3. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01

4. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency;Nanoscale Research Letters;2018-04-24

5. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes;Materials;2017-10-24

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