High p-type doping level of MgZnCdSe on InP substrates by inserting ZnTe thin layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates
2. Novel compound system grown on InP substrates by MBE and theoretical investigation of 550–640 nm range lasers
3. Epitaxial growth of n- and p-type ZnCdSe on InP
4. Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
5. Bulk Lattice Instability in II-VI Semiconductors and Its Effect on Impurity Compensation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 7.1.5 Quantum wells and superlattices based on ZnTe and its alloys;Growth and Structuring;2013
2. Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates;Japanese Journal of Applied Physics;2011-03-22
3. Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates;Japanese Journal of Applied Physics;2011-03-01
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