Influence of the deformation on the luminescence properties of Si light‐emitting diodes-Reference-Cited by-同舟云学术

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Influence of the deformation on the luminescence properties of Si light‐emitting diodes

Published:2005-04 Issue:6 Volume:2 Page:1842-1846
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Sobolev N.A.¹,Emel'yanov A.M.¹,Shek E.I.¹,Feklisova O.V.²,Yakimov E.B.²,Kotereva T.V.³

Affiliation:

1. Ioffe Physico‐Technical Institute, 194021 St. Petersburg, Russia

2. Institute of Microelectronics Technology, 142432 Chernogolovka, Russia

3. Institute of High Purity Substances, 603600 Nizhnii Novgorod, Russia

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460514

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence of Dislocation-Related Electroluminescence in Silicon Light-Emitting Diodes Containing Oxygen Precipitates;Semiconductors;2023-03

2. Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon;Semiconductors;2021-07

3. Dislocation-related photoluminescence in silicon implanted with fluorine ions;Technical Physics Letters;2017-01

4. Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions;Solid State Phenomena;2011-08

5. Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence;Semiconductors;2010-01

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