Nano‐dot addition effect on the electrical properties of Ni contacts to p‐type GaN
Author:
Affiliation:
1. Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500‐712, Korea
2. School of Chemistry, NS60, Seoul National University, Seoul 151‐747, Korea
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200405004
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1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
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5. Electron transport of inhomogeneous Schottky barriers
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