InP‐based long‐wavelength vertical‐cavity surface‐emitting lasers with buried tunnel junction
Author:
Affiliation:
1. Walter Schottky Institut, Technische Universität München, AmCoulombwall 3, 85748 Garching, Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200404770
Reference48 articles.
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2. R.Shau M.Ortsiefer J.Rosskopf G.Böhm F.Köhler M.‐C.Amann Vertical‐cavity surface‐emitting laser diodes at 1.55 μm with large output power and high operation temperature Electron. Lett.37 pp. 1295–1296 (2001)
3. M.Ortsiefer R.Shau F.Mederer R.Michalzik J.Rosskopf G.Böhm F.Köhler C.Lauer M.Maute M.‐C.Amann High‐speed modulation up to 10 Gbit/s with 1.55 μm wavelength InGaAlAs VCSELs Electron. Lett.38 pp. 1180–1181 (2002)
4. G.Böhm M.Ortsiefer R.Shau J.Rosskopf C.Lauer M.Maute F.Köhler F.Mederer R.Meyer M.‐C.Amann InP‐based VCSEL technology covering the wavelength range from 1.3 to 2 μm J. Crystal Growth251 Proceedings of the Twelfth International Conference on Molecular Beam Epitaxy San Francisco CA USA pp. 748–753 (2002)
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