Conduction and valence band edge properties of hexagonal InN characterized by optical measurements
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Physical properties of InN with the band gap energy of 1.1eV
2. On the band gap of indium nitride
3. Effective mass of InN epilayers
4. Optical properties of Si-doped InN grown on sapphire (0001)
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1. Study on higher-energy emission observed locally around V-pits on InGaN/GaN quantum wells grown on moderate-temperature GaN;Journal of Applied Physics;2021-08-07
2. Polarity Inversion and Electron Carrier Generation in III-Nitride Compounds;Epitaxial Growth of III-Nitride Compounds;2018
3. High-quality InN films on GaN using graded InGaN buffers by MBE;Japanese Journal of Applied Physics;2016-04-25
4. High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction;Journal of Physics D: Applied Physics;2016-03-16
5. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides;AIP Advances;2015-07
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