GaAs area-selective regrowth with molecular layer epitaxy for integration of low noise and power transistors, and Schottky diodes

Author:

Nishizawa J.,Płotka P.,Kurabayashi T.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference9 articles.

1. Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics

2. 35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz

3. Y. Watanabe and J. Nishizawa, Jpn. Pat. No. 205068, Appl.: Dec. 1950.

4. Field-effect transistor versus analog transistor (static induction transistor)

5. J. Nishizawa, in: Proceedings Internat. Conf. on Solid State Devices, Tokyo, Japan, 1979, pp. 3-11.

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1. Electrical Characterization of Diamond/Boron Doped Diamond Nanostructures for Use in Harsh Environment Applications;IOP Conference Series: Materials Science and Engineering;2016-01-21

2. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy;Science and Technology of Advanced Materials;2012-02

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