Characterization of pseudo-single-nucleus lateral crystallization method for silicon thin film
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts
2. Sequential lateral solidification of thin silicon films on SiO2
3. High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization
4. 12.4: Late-News Paper: Selectively Enlarging Laser Crystallization Technology for High and Uniform Performance Poly-Si TFTs
5. Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films;Japanese Journal of Applied Physics;2010-12-20
2. Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films;Japanese Journal of Applied Physics;2008-12-19
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