Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN-Reference-Cited by-同舟云学术

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Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN

Published:2007-06 Issue:7 Volume:4 Page:2474-2477
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Shubina T. V.,Glazov M. M.,Ivanov S. V.,Vasson A.,Leymarie J.,Monemar B.,Araki T.,Naoi H.,Nanishi Y.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference15 articles.

1. Electronic and vibrational states in InN and InxGa1−x N solid solutions

2. Accurate stoichiometric analysis of polycrystalline indium nitride films with elastic recoil detection

3. Effects of the narrow band gap on the properties of InN

4. Fermi-level stabilization energy in group III nitrides

5. Optical Properties ofn-Type Indium Arsenide in the Fundamental Absorption Edge Region

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mode switching in InN microresonators;Journal of Physics: Conference Series;2015-11-02

2. Temperature switching of cavity modes in InN microcrystals;Semiconductors;2015-11

3. Plasmonic Effects in Metal-Semiconductor Nanostructures;S SEMI SCI;2015-04-01

4. Metastable nature of InN and In-rich InGaN alloys;Journal of Crystal Growth;2014-10

5. Plasmonic effects in In(Ga)N;SPIE Proceedings;2011-02-10

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