Lucky‐drift model for avalanche multiplication in amorphous semiconductors-Reference-Cited by-同舟云学术

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Lucky‐drift model for avalanche multiplication in amorphous semiconductors

Published:2004-03 Issue:5 Volume:1 Page:1186-1193
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Rubel O.¹,Baranovskii S. D.¹,Zvyagin I. P.²,Thomas P.¹,Kasap S. O.³

Affiliation:

1. Department of Physics and Material Sciences Center, Philipps‐University Marburg, 35032 Marburg, Germany

2. Faculty of Physics, Moscow State University, 119899, Moscow, Russia

3. Department of Electrical Engineering, University of Saskatchewan, Saskatoon S7N 5A9, Canada

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304319

Reference12 articles.

1. Random phase model of amorphous semiconductors II. Hot electrons

2. Impact ionization and mobilities of charge carriers at high electric fields in amorphous selenium

3. K.Taniokaet al. IEEE Electron Devices Lett. EDL‐8 p. 388 1987.

4. Impact ionization process in amorphous selenium

5. Ultra-High-Sensitive Image Pickup Tubes Using Avalanche Multiplication in a-Se.

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