Scattering of acoustic phonons by embedded layers, extended defects and interfaces in diamond, silicon and II‐VI compounds-Reference-Cited by-同舟云学术

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Scattering of acoustic phonons by embedded layers, extended defects and interfaces in diamond, silicon and II‐VI compounds

Published:2004-11 Issue:11 Volume:1 Page:2941-2946
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Sharkov A. I.¹,Galkina T. I.¹,Klokov A. Yu.¹

Affiliation:

1. Solid State Department, P.N. Lebedev Physical Institute, RAS, 119991, Leninskii pros. 53, Moscow, Russia

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200405408

Reference10 articles.

1. Ion-implanted buried layer in diamond as a source of ballistic phonons at liquid-helium temperatures

2. V.S.Bagaev T. I.Galkina A.Yu.Klokovet al. Phys. Solid State (2004) (in print).

3. Propagation of nonequilibrium acoustic phonons in high-purity coarse-grained ZnTe

4. Propagation of nonequilibrium phonons in single-crystal ZnTe

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonequilibrium phonons in SiGe quantum-well nanostructures upon excitation by picosecond laser pulses;Physics of the Solid State;2008-08

2. Evolution of a system of nonequilibrium acoustic phonons in monocrystalline and pure coarse-grained ZnSe;Journal of Physics: Conference Series;2007-12-01

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