Spontaneous polarization in III-nitride materials: crystallographic revision-Reference-Cited by-同舟云学术

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Spontaneous polarization in III-nitride materials: crystallographic revision

Published:2010-05-14 Issue:7-8 Volume:7 Page:1841-1843
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Karpov Sergey Yu.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs;Micro and Nanostructures;2022-04

2. Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications—Part I: Physics Based Compact Modeling;IEEE Sensors Journal;2021-09-15

3. Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells;Materials;2021-08-30

4. Enhanced InGaN/GaN photoelectrodes for visible-light-driven hydrogen generation by surface roughening;physica status solidi (a);2016-05-25

5. Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure;Applied Physics Letters;2016-02-08

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