Transient photocurrent as a probe to follow n‐InP oxidation
Author:
Affiliation:
1. IREM (Institut Lavoisier) UMR 8637, Université de Versailles‐St‐Quentin , 45, Av. des Etats Unis, 78 035 Versailles cedex, France
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306231
Reference22 articles.
1. C. N.Willsem Physics and Chemistry of III–V Compound Semiconductor Interfaces (Plenum Press New York 1985).
2. H. L.Hartnagel Oxides and oxide films Vol. 6 (Marcel Dekker New York 1981).
3. Optical properties of native oxides on InP
4. P. H. L.Notten J. E. A .M.Van den Meeraker andJ. J.Kelly Etching of III–V Semiconductors: An Electrochemical Approach (Elsevier Amsterdam 1991).
5. Photodissolution of n-GaAs electrodes under laser illumination: control of the etching profile
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1. Stability of InP oxide versus solvated electrons in liquid ammonia;Comptes Rendus Chimie;2013-01
2. Growth and formation of hybrid structures on InP by alternated anodizations in aqueous media and liquid ammonia;Comptes Rendus Chimie;2008-09
3. Cathodic Behavior of n-InP Modified by a Thin Anodic Oxide;Journal of The Electrochemical Society;2004
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