Investigation of top gate electrode options for high-k gate dielectric MOS capacitors-Reference-Cited by-同舟云学术

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Investigation of top gate electrode options for high-k gate dielectric MOS capacitors

Published:2008-12 Issue:12 Volume:5 Page:3626-3629
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Moschou D. C.,Verrelli E.,Kouvatsos D. N.,Normand P.,Tsoukalas D.,Speliotis A.,Bayiati P.,Niarchos D.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference10 articles.

1. C. Hu, in: IEDM Tech. Dig., 1996, pp. 319-322.

2. Y. Momiyama, H. Minakata, and T. Sugii, in: Symp. VLSI Tech. Dig., 1997, pp. 135-136.

3. C. H. Lee, H. F. Luan, W. P. Bai, S. J. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, in: IEDM Tech. Dig. 2000, pp. 27-30.

4. A. Chin, C. C. Liao, C. H. Lu, W. J. Chen, and C. Tsai, in: Symp. VLSI Tech. Dig., 1999, pp. 135-136.

5. <tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

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