(111) and (100) YSZ as substrates for indium nitride growth-Reference-Cited by-同舟云学术

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(111) and (100) YSZ as substrates for indium nitride growth

Published:2005-04-11 Issue:7 Volume:2 Page:2320-2323
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Anderson P. A.¹,Kendrick C. E.¹,Kinsey R. J.¹,Asadov A.²,Gao W.²,Reeves R. J.³,Durbin S. M.¹

Affiliation:

1. Department of Electrical and Computer Engineering, MacDiarmid Institute, University of Canterbury, Christchurch, New Zealand

2. Department of Chemical and Materials Engineering, University of Auckland, New Zealand

3. Department of Physics and Astronomy, MacDiarmid Institute, University of Canterbury, Christchurch, New Zealand

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461336

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vibrational and dielectric properties of InN in orthorhombic Pnma phase;Journal of Physics and Chemistry of Solids;2023-11

2. Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors;Journal of Applied Physics;2016-08-28

3. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation;Technical Physics Letters;2015-03

4. Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation;Japanese Journal of Applied Physics;2013-11-01

5. Applications of Fianite in Electronics;Advances in OptoElectronics;2012-12-19

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