Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time‐resolved four‐wave mixing technique-Reference-Cited by-同舟云学术

Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time‐resolved four‐wave mixing technique

Published:2005-04-11 Issue:7 Volume:2 Page:2724-2727
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Gurskii A. L.¹,Lutsenko E. V.¹,Pavlovskii V. N.¹,Zubialevich V. Z.¹,Yablonskii G. P.¹,Aleksiejūnas R.²,Jarašiūnas K.²,Letertre F.³,Faure B.³,Schineller B.⁴,Alam A.⁴,Heuken M.⁴,Dikme Y.⁵,Kalisch H.⁵,Jansen R. H.⁵

Affiliation:

1. Stepanov Institute of Physics, National Acad. Sci. of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus

2. Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9‐3, 10222 Vilnius, Lithuania

3. SOITEC S.A., Parc Technologique des Fontaines, 38190 Bernin, France

4. AIXTRON AG, Kackertstr. 15‐17, 52072 Aachen, Germany

5. Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461449

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1. Threshold of stimulated emission in GaN layers grown by various techniques;Physica B: Condensed Matter;2014-10

2. Stimulated emission and lasing from an Al0.13Ga0.87N∕GaN double heterostructure grown on a silicon substrate;Applied Physics Letters;2008-01-14

3. Advantages of the time-resolved four-wave mixing technique for studies of non-equilibrium carrier dynamics in bulk semiconductors and structures;Optical Materials;2008-01

4. Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate;Applied Physics Letters;2007-04-09

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