A novel evaluation method to determine the fractal dimension of SEM images: a study of Au/Pd/GaAs contacts during heat treatment
Author:
Affiliation:
1. Department of Electronics Technology of Budapest University of Technology, 1521 Budapest, Hungary
2. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest, Hungary
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306326
Reference8 articles.
1. G.Y.Robinson in: Physics and Chemistry of III–V Compound Semiconductor Interfaces edited by C.W. Wilmsen (Plenum New York 1985) p. 73.
2. In situ measurements of arsenic losses during annealing of the usual evaporated contacts of GaAs Gunn diodes
3. The interaction of gold thin films with InP
4. The Volatile Component Loss and the Surface Morphology of the Gold-Palladium Metallizations to the Compound Semiconductor Structures
5. Fractal behaviour of the surface of in situ heat treated metal–InP contacts
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