On the isotope effect in thermal conductivity of silicon-Reference-Cited by-同舟云学术

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On the isotope effect in thermal conductivity of silicon

Published:2004-11 Issue:11 Volume:1 Page:2995-2998
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Inyushkin A. V.¹,Taldenkov A. N.¹,Gibin A. M.²,Gusev A. V.²,Pohl H.‐J.³

Affiliation:

1. Institute of Molecular Physics, Russian Research Centre, Kurchatov Institute, Kurchatov sq. 1, 123182 Moscow, Russia

2. Institute of Chemistry of High‐Purity Substances, Russian Academy of Sciences, Tropinin st. 49, 603950 Nizhny Novgorod, Russia

3. VITCON Projectconsult GmbH, 07745, Otto‐Schott Str. 13, Jena, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200405341

Reference14 articles.

1. Kinetic coefficients in isotopically disordered crystals

2. Thermal conductivity of isotopically enriched silicon

3. The Highly Isotopic Enriched (99.9%), High-Pure28Si Single Crystal

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