Initial growth and properties of atomic layer deposited TiN films studied by in situ spectroscopic ellipsometry
Author:
Affiliation:
1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200562218
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In situspectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd;Journal of Physics D: Applied Physics;2016-02-17
2. Initial Stages of Atomic Layer Deposition of Tantalum Nitride on SiO2 and Porous Low-κ Substrates Modified by a Branched Interfacial Organic Layer: Chemisorption and the Transition to Steady-State Growth;The Journal of Physical Chemistry C;2012-10-04
3. On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces;Thin Solid Films;2012-09
4. Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition;Plasma Sources Science and Technology;2011-01-07
5. Interfacial organic layers: Tailored surface chemistry for nucleation and growth;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-09
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