High‐speed and high‐frequency electron effects in nitride semiconductors for terahertz applications-Reference-Cited by-同舟云学术

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High‐speed and high‐frequency electron effects in nitride semiconductors for terahertz applications

Published:2005-04-11 Issue:7 Volume:2 Page:2569-2572
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kim K. W.¹,Sokolov V. N.¹²,Kochelap V. A.²,Korotyeyev V. V.²,Woolard D. L.³

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, 27695‐7911, Raleigh, NC, USA

2. Department of Theoretical Physics, Institute for Semiconductor Physics, 03650 Kiev, Ukraine

3. Electronics Division, US Army Research Office, 27709‐2211, Research Triangle Park, NC, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461372

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN;Semiconductor physics, quantum electronics and optoelectronics;2009-10-30

2. Negative small-signal impedance of nanoscale GaN diodes in the terahertz frequency regime;Applied Physics Letters;2007-04-02

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