Addition of SiF4to standard SiH4+H2plasma: an effective way to reduce oxygen contamination in μc-Si:H films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells;AIP Advances;2017-02
2. Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking;Journal of Physics D: Applied Physics;2015-06-16
3. Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys;Journal of Physics D: Applied Physics;2014-10-27
4. Deposition of High-Efficiency Microcrystalline Silicon Solar Cells Using SiF $_{\bf 4}$/H$_{\bf 2}$/Ar Mixtures;IEEE Journal of Photovoltaics;2013-01
5. Tailored Voltage Waveform Deposition of Microcrystalline Silicon Thin Films from Hydrogen-Diluted Silane and Silicon Tetrafluoride: Optoelectronic Properties of Films;Japanese Journal of Applied Physics;2012-08-20
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