Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors-Reference-Cited by-同舟云学术

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Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors

Published:2005-04 Issue:6 Volume:2 Page:1902-1906
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Prokhorov I. A.¹,Shul'pina I. L.²,Strelov V. I.¹,Zakharov B. G.¹,Ratnikov V. V.²

Affiliation:

1. Space Materials Science Research Centre of the Crystallography Institute, RAS, Akademicheskaya 8, 248640 Kaluga, Russia

2. Ioffe Physico‐Technical Institute, RAS, Politekhnicheskaya 26, 194021 St. Petersburg, Russia

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460557

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals;Crystallography Reports;2021-05

2. X-Ray Topography: Yesterday, Today, and Prospects for the Future;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-09

3. Application of X-ray topography to USSR and Russian space materials science;IUCrJ;2016-03-30

4. X-ray diffraction topography for materials science;Crystallography Reports;2012-09

5. Some results of the growth of semiconductor crystals in microgravity conditions (to the 50th anniversary of Yuri Gagarin’s flight into space);Physics of the Solid State;2012-07

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