Rhodium-based Schottky contacts on n-doped gallium nitride
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Schottky barrier properties of various metals on n-type GaN
2. Thermally stable AlGaN∕GaN heterostructure field-effect transistor with IrO[sub 2] gate electrode
3. Effects of Interfacial Thin Metal Layer for High-Performance Pt–Au-Based Schottky Contacts to AlGaN–GaN
4. Schottky contact and the thermal stability of Ni onn‐type GaN
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1. Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air;Applied Physics Letters;2017-06-19
2. Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode;Journal of Electronic Materials;2016-08-02
3. Thermally robust RuOxSchottky diodes and HEMTs on III-nitrides;physica status solidi (c);2014-02
4. Electronic parameters and carrier transport mechanism of high-barrier Se Schottky contacts to n-type GaN;Solid State Communications;2014-02
5. Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon;ECS Solid State Letters;2013-12-18
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