Dependences of GaN polarity on the growth temperatures of migration‐enhanced‐epitaxy‐grown AlN in MOVPE
Author:
Affiliation:
1. CREST, JST, 4‐1‐8, Honcho, Kawaguchi‐shi, Saitama 332‐0012, Japan
2. Department of Electronics and Mechanical Engineering, Chiba University, 1‐33, Yayoi‐Cho, Inage‐ku, Chiba 263‐8522, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303470
Reference11 articles.
1. The Polarity of GaN: a Critical Review
2. A.YoshikawaandK.Xu Opt. Mater. 2003 in press.
3. Polarity control in MBE growth of III-nitrides, and its device application
4. Ga Polarity Preference in Halide Vapor Phase Epitaxy of GaN on a GaAs (111)B: As Polar Substrate
5. Effect of buffer-layer engineering on the polarity of GaN films
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1. Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System;Semiconductors and Semimetals;2017
2. Polarity of GaN with polar {0001} and semipolar , , orientations by x-ray photoelectron diffraction;Journal of Materials Research;2015-06-05
3. Fabrication of n-Type GaN Layers by the Pulse Injection Method at 950°C for Intersubband Devices;Electrochemical and Solid-State Letters;2011
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